Price | RM150.00 |
Product SKU | KVR26S19S8/8 |
Brand | Kingston |
Availability | In Stock |
Shipping Fee |
Malaysia
Free for certain area only
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Quantity |
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- Power Supply: VDD = 1.2V Typical
- Nominal and dynamic on-die termination (ODT)
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- Low-power auto self refresh
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Features:
Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
SPECIFICATIONS:
CL(IDD) | 19 cycles |
Row Cycle Time (tRCmin) | 45.75ns(min.) |
Refresh to Active/Refresh Command Time (tRFCmin) |
350ns(min.) |
Row Active Time (tRASmin) | 32ns(min.) |
Maximum Operating Power | TBD W* |
UL Rating | 94 V - 0 |
Operating Temperature | 0C to +85C |
Storage Temperature | -55C to +100C |
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